
		<paper>
			<loc>https://jjcit.org/paper/58</loc>
			<title>LOW PASS AND QUAD BAND PASS TUNABLE FILTER BASED ON STUB RESONATOR TECHNIQUE</title>
			<doi>10.5455/jjcit.71-1557923217</doi>
			<authors>Yanal S. Faouri,Hanin Sharif,Leena Smadi,Hani Jamleh</authors>
			<keywords>Tunable filter,Reflection coefficient,Transmission coefficient,Varactor  diode,Low  pass  filter,Bandpass filter,Bandwidth,Multiple passbands,Group delay,External quality factor,Mutual coupling.</keywords>
			<citation>14</citation>
			<views>6265</views>
			<downloads>2281</downloads>
			<received_date>2019-05-15</received_date>
			<revised_date>2019-06-23</revised_date>
			<accepted_date>2019-07-09</accepted_date>
			<abstract>An  electronically  tunable  multi-passband  filter  using  one  varactor  diode is implemented  based  on  transmission 
line stub method for passing several most favourable applications through multiple operating bands. In this paper, 
the filter is designed on Rogers RT/Duroid 5880-substrate and its input and output ports are terminated by 50 Ω 
microstrip feed line. The filter passbands consist of low pass filter (LPF) with tunable cut-off frequency which can 
reach 0.94 GHz, then several tunable bandpass filters (BPFs) that can cover the following frequency ranges BPF1 
(1.94 – 3.33 GHz), BPF2 (3.83 – 4.23 GHz), BPF3 (4.53 – 5.56 GHz) and BPF4 (6.83 – 7.48 GHz) with insertion 
loss (IL) of  |S21|  ≤  3  dB.  The  designed  filter  is the binomial  type  with  3  elements  that are implemented  in  three 
shunt stubs with the middle stub being shorted. A parametric study was conducted for the optimum location of the 
varactor diode  and  an  external  DC  biasing  circuit  introduced to  produce  the  required  reverse  biasing  for  the 
varactor diode and  its  effect  was  considered.  The  demonstrated  filter  is  investigated  using  the  high-frequency 
structure simulator (HFSS). The measured scattering parameters’ S11 (reflection coefficient) and S21 (transmission 
coefficient) results show good agreement with the simulated values.</abstract>
		</paper>


